Limitations of a simplified dangling bond recombination model for a-Si:H
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چکیده
The validity of a widely used simple closed-form expression for the recombination associated with dangling bonds in hydrogenated amorphous silicon a-Si:H is linked to the relative position of the distribution of the dangling bond states with respect to the quasi-Fermi levels for trapped electrons and holes. However, these quasi-Fermi levels for traps have not been derived before. In this work, we derive the four relevant quasi-Fermi levels for traps associated with dangling bonds in a-Si:H and clarify the limitations of the simple model. © 2008 American Institute of Physics. DOI: 10.1063/1.3037235
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تاریخ انتشار 2008